J Vac Sci Technol B 2012, 30:020602.www.selleckchem.com/products/kpt-8602.html CrossRef 15. Yu Q, Liu Y, Chen TP, Liu Z, Yu YF, Lei HW, Zhu J, Fung S: Flexible write-once–read-many-times memory device based on a nickel oxide thin film. IEEE Trans Electron Devices 2012, 59:858–862.CrossRef 16. Kuang Y, Huang R, Tang Y, Ding W, Zhang
L, Wang Y: Flexible single-component-polymer resistive memory for ultrafast and highly compatible nonvolatile memory applications. IEEE Electron Device Lett 2010, 31:758–760.CrossRef 17. He G, Sun Z: High-k Gate Dielectrics for CMOS Technology. Germany: Wiley-VCH; 2012:111.CrossRef 18. Wilk GD, Wallace RM, Anthony JM: High-κ gate dielectrics: current status and materials properties considerations. J Appl Phys 2001, 89:5243–5275.CrossRef 19. Lopes JMJ, Roeckerath Fedratinib datasheet M, Heeg T, Rije
E, Schubert J, Mantl S, Afanasev VV, Shamuilia S, Stesmans A, Jia Y, Schlom DG: Amorphous lanthanum lutetium oxide thin films as an alternative high-κ gate dielectric. Appl Phys Lett 2006, 89:222902.CrossRef 20. Darmawan P, Lee Quisinostat mw PS, Setiawan Y, Lai JC, Yang P: Thermal stability of rare-earth based ultrathin Lu 2 O 3 for high-k dielectrics. J Vac Sci Technol B 2007, 25:1203–1207.CrossRef 21. Gao X, Xia Y, Xu B, Kong J, Guo H, Li K, Li H, Xu H, Chen K, Yin J, Liu Z: Unipolar resistive switching behaviors in amorphous lutetium oxide films. J Appl Phys 2010, 108:074506.CrossRef 22. Pan TM, Lu CH, Mondal S, Ko FH: Resistive switching characteristics of Tm 2 O 3 , Yb 2 O 3 , and Lu 2 O 3 -based metal–insulator–metal memory devices. IEEE
Trans Nanotechnol click here 2012, 11:1040–1046.CrossRef 23. Nefedov VI, Gati D, Dzhurinskii BF, Sergushin NP, Salyn YV: X-ray electron study of oxides of elements. Zhur Neorg Khim 1975, 20:2307–2314. 24. Mondal S, Chen HY, Her JL, Ko FH, Pan TM: Effect of Ti doping concentration on resistive switching behaviors of Yb 2 O 3 memory cell. Appl Phys Lett 2012, 101:083506.CrossRef 25. Walczyk C, Walczyk D, Schroeder T, Bertaud T, Sowinska M, Lukosius M, Fraschke M, Wolansky D, Tillack B, Miranda E, Wenger C: Impact of temperature on the resistive switching behavior of embedded HfO 2 -based RRAM devices. IEEE Trans Electron Devices 2011, 58:3124–3131.CrossRef 26. Tseng HC, Chang TC, Huang JJ, Yang PC, Chen YT, Jian FY, Sze SM, Tsai MJ: Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment. Appl Phys Lett 2011, 99:132104.CrossRef 27. Chiu FC: Electrical characterization and current transportation in metal/Dy 2 O 3 /Si structure. J Appl Phys 2007, 102:044116.CrossRef 28. Chiu FC, Chou HW, Lee JY: Electrical conduction mechanisms of metal/La 2 O 3 /Si structure. J App Phys 2005, 97:103503.CrossRef 29. Chen C, Yang YC, Zeng F, Pan F: Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device. Appl Phys Lett 2010, 97:083502.CrossRef 30.